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| d1 n-channel mosfet p-channel mosfet d1d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 so-8 advanced process technology ultra low on-resistance dual n and p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel . ! ! " !# !# $% & ' ( % )& & * ' !" ! ! " ! $% +, - . - " /0 +, ' ! ! + 1 2 , +, - . - ! /0 $ 3& 1 , .&,& &,& ! ! % 0 & /2 1 4 % 5 6//$7 %%2 + 8 5 6//0 +/9 1 ( ! 8 www.irf.com 1 form quantity IRF9952Qtrpbf so-8 tape and reel 4000 eol 529 IRF9952Qpbf so-8 tube 95 eol 529 IRF9952Qpbf please search the eol part number on irs website for guidance base part number package type standard pack eol notice orderable part number replacement part number downloaded from: http:/// www.irf.com 2 : / & ;19 &< % ! !"# !"# $! %& ' !( $# $! %& ' !( $# ) $ $ # $ $! * ! $ # $+! ! $ $ # , * * ! !# $ !"# $ !"# $ $! !# * $! # * * ! * $ !( ! * $ !( -./'01234 55 6$ 6 + , $* + $ $ $ $ 7 * $ ) ! $ $ + $ , 7 $, ) ) $) $* ) $ + * + + , $* $, $, $ 0 $$ +$ !* 8 ./'931 :4 ? ; ? 931 :4 && ' % . '8 ./'< % ' - : :4 4 01 ' /' ' 8 ./'234/ = :-4 = -./'4 = -8 >? ::?@4 / < 8: % / <&&8: 0:: /' ' ' %a &' ' ;( . "# : $ )# $ $ : # $ $ : $ $ # % + , % $ : $ $ # % + % $ : $! b $ cd : $! b $ cd $ 7 $ $+ $+ ) $ !( $ !# ) $ !( $ !# 7 ! 7 !* ) !7 $ + ! " //./'/ >9 8 @ /:./'/ >9 8 @ 8 01 :4 %a%'a = %a%'a 4 # : !( $ !# ; $#;" : !( $ !# ; $#;" ' !+<&& +=%< < $ ' !+<&& #+=%< < 1 2 , >2% 7& / &9. / 6!? /2 !) :! * $% 7& =%>&.. @! <a /b1 <' !+!) ; * $ <a ("/b1 <' !+! # downloaded from: http:/// www.irf.com 3 ! ! ! ! "#! #$ %#&$# ' 1 10 100 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds downloaded from: http:/// www.irf.com 4 (#)* $ ) ! +,)!)-. / ' ! ! 0 # ' -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 2.2a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 03691 21 5 a i = 3.5a d gs v , gate-to-source voltage (v) 1 ) *< c 1 %% ) * 0 20 40 60 80 100 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) itop 0.89a 1.6a bottom 2.0a d 0.04 0.06 0.08 0.10 0.12 0 2 4 6 8 10 12 a i , drain current (a) d v = 10v gs v = 4.5v gs 1 ) *< c 1 %% ) * downloaded from: http:/// www.irf.com 5 +,)!)/ . )1) $ 23! # #-)4 0 ' 0 #"#! # ' #"#! # ' 0 50 100 150 200 250 300 350 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 1.8a v = 10v ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) downloaded from: http:/// www.irf.com 6 ! ! ! ! "#! #$ %#&$# ' 0.1 1 10 100 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 0.1 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20 s pulse width t = 150c j 0.1 1 10 100 3.0 4.0 5.0 6.0 7.0 8.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) downloaded from: http:/// www.irf.com 7 (#)* $ ) ! +,)!)-. / ' ! ! 0 # ' -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -1.0a 0.0 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 5.0 a -i , drain current (a) d v = -10v v = -4.5v gs gs 0.00 0.20 0.40 0.60 0.80 0 3 6 9 12 15 a gs i = -2.3a d -v , gate-to-source voltage (v) 1 < c 1 %% ) * 1 < c 1 %% ) * 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.58a -1.0a -1.3a downloaded from: http:/// www.irf.com 8 0 ' 0 #"#! # ' #"#! # ' 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -2.3a v = -10v ds +,)!)/ . )1) $ 23! # #-)4 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) downloaded from: http:/// www.irf.com 9 so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rect if ier logo f7101 y = last digit of the year part number lot code ww = we e k e xample : t his is an irf 7101 (mos f et ) p = designat es lead-free product (optional) a = assembly site code ! downloaded from: http:/// www.irf.com 10 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) ! downloaded from: http:/// www.irf.com 11 qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ?? ) rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f ?? guidelines) yes moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments 10/3/2014 ? added ordering information to reflect the end-of-life revision history downloaded from: http:/// |
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